Transistor with buffer structure having carbon doped profile

ABSTRACT

In a described example, an integrated circuit (IC) is disclosed that includes a transistor. The transistor includes a substrate, and a buffer structure overlying the substrate. The buffer structure has a first buffer layer, a second buffer layer overlying the first buffer layer, and a third buffer layer overlying the second buffer layer. The first buffer layer has a first carbon concentration, the second buffer layer has a second carbon concentration lower than the first carbon concentration, and the third buffer layer has a third carbon concentration higher than the second carbon concentration. An active structure overlies the buffer structure.

CROSS-REFERENCE TO RELATED APPLICATIONS

The present application is a division of U.S. patent application Ser.No. 17/110,811, filed on Dec. 3, 2020, which is incorporated herein byreference.

TECHNICAL FIELD

This description relates to a transistor with a buffer structure havinga carbon doped profile.

BACKGROUND

Gallium-nitride (GaN) is a commonly used Group IIIA-N material forelectronic devices, where Group IIIA elements such as Ga (as well asboron, aluminum, indium, and thallium) are also sometimes referred to asGroup 13 elements. GaN is a binary Group IIIA/V direct band gapsemiconductor that has a Wurtzite crystal structure. Its relatively wideband gap of 3.4 eV at room temperature (vs. 1.1 eV for silicon at roomtemperature) affords it special properties for a wide variety ofapplications in optoelectronics, as well as high-power andhigh-frequency electronic devices.

GaN-based high electron mobility transistors (HEMTs) are known whichfeature a junction between two materials with different band gaps toform a heterojunction (or ‘heterostructure’). The high electron mobilitytransistor (HEMT) structure is based on a very high electron mobility,described as a two-dimensional electron gas (2DEG) which forms justbelow a heterostructure interface between a barrier layer (thattypically comprises AlGaN) on a generally intrinsic active layer (thattypically comprises GaN) due to the piezoelectric effect and a naturalpolarization effect. As with any power field effect transistor (FET)device, there is a gate, source electrode, and drain electrode, wherethe source electrode and the drain electrode each include contacts thatgenerally extend through a portion of the barrier layer to form a lowresistance ohmic contact with the underlying 2DEG in the surface of theactive layer.

SUMMARY

In one example, an integrated circuit (IC) is disclosed that includes atransistor on a substrate. The transistor includes a buffer structureoverlying the substrate. The buffer structure has a first buffer layer,a second buffer layer overlying the first buffer layer, and a thirdbuffer layer overlying the second buffer layer. The first buffer layerhas a first carbon concentration, the second buffer layer has a secondcarbon concentration lower than the first carbon concentration, and thethird buffer layer has a third carbon concentration higher than thesecond carbon concentration. An active structure overlies the bufferstructure.

In another example, an IC is disclosed that includes a gallium nitride(GaN) transistor device on a substrate. The GaN transistor deviceincludes a a buffer structure overlying the substrate. The bufferstructure comprises one or more base aluminum gallium nitride (AlGaN)buffer layers overlying the substrate, a first AlGaN buffer layeroverlying the one or more base AlGaN buffer layers, a second AlGaNbuffer layer overlying the first AlGaN buffer layer, and a GaN bufferlayer overlying the second AlGaN buffer layer. The first AlGaN bufferlayer has a first carbon concentration, the second AlGaN buffer layerhas a second carbon concentration lower than the first carbonconcentration, and the GaN buffer layer has a third carbon concentrationhigher than the second carbon concentration. An active structureoverlies the GaN buffer layer and includes a first channel layer and asecond channel layer overlying the first channel layer, where the firstchannel layer and the second channel layer are formed from two differentmaterials that induce a highly-mobile 2-dimensional gas (2DEG) at theirinterface to form a transistor channel. A gate contact structure isdisposed between a source contact and a drain contact. The gate contactstructure, the source contact and the drain contact are eachrespectively disposed above or in contact with the transistor channel.

In yet a further example, a method of forming an integrated circuit (IC)having a transistor is disclosed. The method includes forming a firstbuffer layer having a first carbon concentration over a substrate, andforming a second buffer layer having a second carbon concentration lowerthan the first carbon concentration overlying the first buffer layer. Athird buffer layer having a third carbon concentration higher than thesecond carbon concentration is formed over the second buffer layer, andan active structure is formed overlying the third buffer layer.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 illustrates a cross-sectional view of an example of a portion ofan integrated circuit that includes a high electron mobility transistor(HEMT) device.

FIG. 2 illustrates a graph of atom concentration (atoms/cubiccentimeter) versus device depth (nm) of one example of a modulatedcarbon profile for a HEMT device.

FIG. 3 illustrates a schematic diagram of an example of a depositionsystem having a deposition chamber for building buffer layers of abuffer structure of a HEMT device.

FIG. 4 illustrates a cross-sectional view of a partially fabricated HEMTin its early stages of fabrication while undergoing a depositionprocess.

FIG. 5 illustrates the partially fabricated HEMT of FIG. 4 after thedeposition process and while undergoing a subsequent deposition process.

FIG. 6 illustrates the partially fabricated HEMT of FIG. 5 after thesubsequent deposition process and while undergoing an additionaldeposition process.

FIG. 7 illustrates the partially fabricated HEMT of FIG. 6 afterundergoing the additional deposition process.

FIG. 8 illustrates the partially fabricated HEMT of FIG. 7 afterformation of an active structure overlying the buffer structure.

FIG. 9 illustrates a fabricated HEMT after formation of a drain contact,a source contact and a gate contact structure on the partiallyfabricated HEMT of FIG. 8 .

DETAILED DESCRIPTION

High electron mobility transistors (HEMTs) typically include a layer ofhighly-mobile electrons, which are induced by forming a heterostructureincluding a group III nitride-based alloy with broader band-gap (e.g.,aluminum gallium nitride (AlGaN)) grown over another group III nitridematerial with a narrower bandgap (e.g., gallium nitride (GaN)). Thelarge conduction-band offset, spontaneous polarization, andpiezoelectric polarization in such a heterostructure induce ahighly-mobile 2-dimensional electron gas (2DEG) at their interface, thusforming a channel of the transistor. For the sake of illustration, someof the description herein focuses on AlGaN/GaN heterostructures.However, this description is not limited to AlGaN/GaN-basedheterostructures and can be applied to other heterostructures that caninduce the 2DEG at their interface. Existing semiconductor fabricationtechniques can be used to manufacture HEMTs using AlGaN/GaN-basedheterostructures on a substrate (e.g., a semiconductor wafer).

HEMTs are fabricated such that the 2DEG is formed between the source anddrain contact structures of the HEMT. A gate contact structure isgenerally positioned between the source and drain contact structures.HEMTs can be classified as enhancement mode HEMTs or depletion modeHEMTs. Enhancement mode HEMTs are designed such that a depletion regionforms under the gate contact structure at the AlGaN/GaN interface,meaning that electrons under the gate contact structure are depleted,making enhancement mode HEMTs normally-OFF devices. Enhancement modeHEMTs can be turned ON by applying a positive threshold voltage to thegate contact structure. On the other hand, depletion mode HEMTs aredesigned such that the 2DEG is always present at the AlGaN/GaN interfacebetween the source and drain contact structures, meaning that depletionmode HEMTs are normally-ON devices. Depletion mode HEMTs are turned OFFby applying a negative threshold voltage to the gate contact structure.

In high-voltage (e.g., operating voltage over 500V) applications, bothenhancement and depletion mode HEMTs suffer from a back gating effect inthat the high voltage between the drain of the device and the substratedepletes the channel. Therefore, a buffer structure or stack formed ofmultiple epitaxial layers is fabricated between the substrate and thechannel formed by the 2DEG. The buffer needs to be relatively thick andresistive/capacitive enough to provide the necessary isolation andhandle the high voltage applied between the drain and the substrate. Thebuffers of the GaN HEMTs typically require carbon doping to createcurrent collapse reliability issues. That is GaN due to its naturalimpurities, such as Oxygen and/or Nitrogen, results in a n-typebehavior. Carbon behaves as an acceptor resulting in the GaN behaving asa p-type device mitigating current collapse. However, excessive dopingcan result in vertical leakage issues in the buffer structure.

Accordingly, at least some of the examples disclosed herein are directedtowards an HEMT with a modulated carbon concentration profile throughthe buffer structure in order to maintain both low vertical leakage andimproved back gating behavior. At least some of the examples aredirected towards GaN-based HEMTs. Increasing carbon within a bufferlayer of GaN increases the resistance and capacitance of the respectivelayer. By modulating the carbon within the buffer layers of the bufferstructure, a device with lower vertical leakage and improved back gatingbehavior is obtained. Other types of GaN type devices with a bufferstructure could employ the modulated carbon concentration profile.

In one example, a first buffer layer has a first carbon concentration, asecond buffer layer overlying the first buffer layer has a second carbonconcentration, and a third buffer layer overlying the second bufferlayer has a third carbon concentration, wherein the second carbonconcentration is less than the first carbon concentration, and the thirdcarbon concentration is greater than the second carbon concentration toprovide a saw tooth carbon concentration profile. In a further example,the first buffer layer is formed of AlGaN, the second buffer layer isformed of AlGaN and the third buffer layer is formed of GaN.

FIG. 1 illustrates a cross-sectional view of an example of a portion ofan integrated circuit 100 that includes a HEMT device 101. The HEMTdevice 101 includes an active structure 130 overlying a base structure128. The base structure 128 can comprise a substrate layer 102, anucleation layer 104 and a buffer structure 105. The substrate layer 102can comprise silicon carbide (SiC), sapphire, silicon crystal or anyother appropriate substrate layer materials. The nucleation layer 104can be formed of one or more aluminum nitride (AIN) layers or any otherappropriate nucleation layer or layers. The buffer structure 105 can bean epitaxial stack formed of a plurality of aluminum gallium nitride(AlGaN) layers with a gallium nitride (GaN) layer cap. The bufferstructure 105 can comprise a series of discrete AlGaN layers (typicallybetween two and eight layers), each discrete layer having a differentaluminum composition.

As far as the relative percentages between aluminum and gallium, thepercentage of aluminum in the each of the plurality of AlGaN layers canrange from about 0.1 to 100 percent (i.e., AlxGa1-xN, where x=0.001 to1). For example, the percentage of aluminum in each of the plurality ofAlGaN layers can be between about 20% and 100% aluminum-content aluminumgallium nitride. The plurality of AlGaN layers can be graded ornon-graded. In one example, the plurality of AlGaN layers are graded,the term “graded” being used to denote the process of gradually changingthe percentage of aluminum to its specified percentage, relative to thepercentage of gallium.

In one example, the plurality of AlGaN layers includes one or more baseAlGaN buffer layers 106 overlying the nucleation layer 104, a firstAlGaN buffer layer 108 overlying the one or more base AlGaN bufferlayers 106, and a second AlGaN buffer layer 110 overlying the firstAlGaN buffer layer 108. A GaN cap buffer layer 112 overlies the secondAlGaN buffer layer 110. As previously stated, the plurality of AlGaNlayers can be graded. For example, the one or more base AlGaN bufferlayers 106 can contain 75% aluminum, the first AlGaN buffer layer 108can contain 50% aluminum and the second AlGaN buffer layer 110 cancontain 25% aluminum. The varying of aluminum content facilitates strainmanagement due to the different lattice structure of the GaN cap bufferlayer 112 relative to AlGaN buffer layers. The thickness of each of theplurality of AlGaN buffer layers and the GaN cap buffer layer 112 areselected to provide the appropriate support to handle the voltage acrossthe HEMT device 101.

The active structure 130 overlies the buffer structure 105 and includesa single heterostructure of an AlGaN channel layer 116 overlying a GaNchannel layer 114. A channel is formed from the interface between theAlGaN channel layer 116 and the GaN channel layer 114. Although thepresent example is illustrated with respect to employing a layer ofAlGaN overlying a layer of GaN to form a heterostructure, a variety ofheterostructures could be employed as long as the heterostructurecomprises two layers of dissimilar materials designed to create a sheetof electrons (i.e. a 2DEG channel) or a sheet of holes (i.e., a 2DHGchannel) at the interface between the two dissimilar materials. Variousheterostructure materials are known to produce 2DEG and 2DHG channels atthe interface therebetween, including but not limited to AluminumGallium Nitride (AlGaN) and Gallium Nitride (GaN), Aluminum GalliumArsenide (AlGaAs) and Gallium Arsenide (GaAs), Indium Aluminum Nitride(InAIN) and Gallium Nitride (GaN), alloys of Silicon (Si) and Germanium(Ge), and noncentrosymmetric oxidesheterojunction overlying a bufferstructure.

A gate contact structure 120 resides between a source contact 118 and adrain contact 126 each overlying the AlGaN channel layer 116. The gatecontact structure 120 includes a gate barrier 124 (e.g., siliconnitride) disposed between a gate contact 122 and the AlGaN layer 116.The gate contact 122, the drain contact 118 and the source contact 126can be formed of gold, nickel or some other contact material. The gatecontact structure 120 controls the turning off and on of the HEMTdevice, and thus the current flowing between the source contact 118 andthe drain contact 126. In this example, the HEMT device 101 is adepletion mode device that is normally on, unless a negative bias isapplied at the gate contact 122 to turn the device off. The presentexample is illustrated with the gate contact structure 120, the draincontact 118 and the source contact 126 residing directly on the AlGaN,however, the gate contact structure 120, the drain contact 118 and thesource contact 126 can each be configured respectively in a variety ofdifferent transistor configuration in which the contacts are embedded inthe AlGaN layer 116 and/or disposed on other layers positioned inbetween one or more of the gate contact structure 120, the sourcecontact 118 and the drain contact 126.

In the example of FIG. 1 , the carbon concentration is modulated throughdifferent layers of the buffer structure 105 to provide lower verticalleakage and improved back gating behavior. For example, the first AlGaNbuffer layer 108 is doped with carbon to have a first carbonconcentration, the second AlGan buffer layer 110 is doped with carbon tohave a second carbon concentration, and the GaN cap buffer layer 112 isdoped with a third carbon concentration, wherein the first carbonconcentration is greater than the second carbon concentration, and thesecond carbon concentration is less than the third carbon concentrationto provide a saw tooth carbon concentration profile through the bufferstructure 105.

FIG. 2 illustrates a graph 200 of atom concentration (atoms/cubiccentimeter) versus device depth (nm) of one example of a modulatedcarbon profile for a HEMT device, such as the one shown in FIG. 1 . Asillustrated in the graph 200 from the bottom of the HEMT to the top ofthe HEMT, a base AlGaN buffer layer has a baseline concentration. Thecarbon concentration is then stepped up in a first AlGaN buffer layer toa first carbon concentration higher than the baseline concentration. Thecarbon concentration is then stepped down in a second AlGaN buffer layerto a second carbon concentration lower than the first carbonconcentration. The carbon concentration is then stepped up in a GaN capbuffer layer to a third carbon concentration that is higher than thesecond carbon concentration. This is but one example of modulatingcarbon concentrations within different layers of a buffer structure of aHEMT, and a variety of different modulating concentration and bufferlayers can be selected based on a particular application.

FIG. 3 illustrates a schematic diagram of an example of a depositionsystem 300 having a deposition chamber 302 for building buffer layers ofthe buffer structure. The deposition system 300 includes a pressurecontrol 304, a temperature control 306 and a plurality of gas sources.The plurality of gas sources includes a number of intrinsic gas sourceincluding Trimethylamine Gallium (TMG) source 308, an ammonia source(NH₃) 310, a Trimethylamine Aluminum (TMA) source 312 and an extrinsicsource of an additional carbon source of ethene (C₂H₄) 314. Although thepresent examples have been illustrated employing ethene (C₂H₄) as theadditional carbon source, a variety of other hydrocarbon sources couldbe employed to provide the desired additional carbon doping, such asmethane (CH₄), acetylene (C₂H₂), propane (C₃H₈), iso-butane (i-C₄H₁₀)and trimethylamine (N(CH₃)₃). The deposition system 300 is configured toprovide the selected gases at respective controlled flow rates to formdifferent AlGaN layers and GaN layers with different carbonconcentrations. For example, the TMG and the ammonia can be combined toform a GaN layer with a given carbon concentration. The TMG, the TMA andthe ammonia can be combined to form an AlGaN layer with a respectivebaseline carbon concentration. The additional carbon source of ethenecan be turned on at a respective controlled flow rate to increase thecarbon concentration and provide an AlGaN layer or GaN layer at a givenconcentration that is higher than the baseline carbon concentration whenthe additional carbon source is not turned on. In this manner the carbonconcentration throughout the buffer structure can be modulated betweenalternating lower and higher carbon concentrations.

In the example of FIG. 3 , a partially fabricated HEMT 320 resides inthe deposition chamber 302 and includes a silicon nitride layer 324overlying a substrate layer 322 and one or more base AlGaN buffer layers326 overlying the silicon nitride layer 324. Each of the TMG source 308,the ammonia source (NH₃) 310, the TMA source 312 and the additionalcarbon source of ethene (C₂H₄) 314 are turned on to provide respectivegases at respective flow rates to form a first AlGaN buffer layer (notshown) overlying the one or more base AlGaN layers 326. The first AlGaNbuffer layer is configured to have a carbon concentration higher thanthe baseline of the one or more base AlGaN buffer layers 326. Althoughnot shown, in subsequent processes, a second AlGaN buffer layer isformed over the first AlGaN buffer layer with the additional carbonsource 314 turned off. Additionally, the TMA source can be then turnedoff and the additional carbon source 314 turned on to form a GaN capbuffer layer overlying the second AlGaN buffer layer with a highercarbon concentration than the carbon concentration of the second AlGaNbuffer layer to provide a modulated carbon concentration through thebuffer structure. It is to be appreciated that other gas sources ordifferent gas sources besides the TMG source, the TMA source, theammonia source and the additional carbon source of ethene (C₂H₄) couldbe employed to form the AlGaN layers and GaN layers with a modulatedcarbon concentration profile.

Turning now to FIGS. 4-9 , fabrication is discussed in connection withformation of an example HEMT similar to the HEMT shown in FIG. 1 . FIG.4 illustrates a cross-sectional view of a partially fabricated HEMT 410in its early stages of fabrication. The partially fabricated HEMT 410includes a silicon nitride layer 402 overlying a substrate layer 400 andone or more base AlGaN buffer layers 404 overlying the silicon nitridelayer 402 residing in a deposition chamber as shown in FIG. 3 . Theunderlying substrate layer 400 can be, for example, a silicon or glasswafer that provides mechanical support for the subsequent overlyinglayers. Any suitable technique for forming the silicon nitride layer 402may be employed such as Low Pressure Chemical Vapor Deposition (LPCVD),Plasma Enhanced Chemical Vapor Deposition (PECVD), High Density PlasmaChemical Vapor Deposition (HDPCVD), sputtering or spin-on techniques.The one or more base AlGaN buffer layers 404 can be formed by flowing acombination of TMG, TMA and ammonia gases. The one or more base AlGaNbuffer layers 404 have a respective baseline carbon concentration.

For example, the deposition chamber can undergo and in-situ cleaningprior to disposing the substrate into the deposition chamber. Thein-situ cleaning can be performed within the ranges of about 5 minutesto about 15 minutes at a temperature of about 750° C. to about 1250° C.at a pressure of about 35 millimeter bars (mmbars) to about 65 mmbars.The silicon nitride layer 402 can be formed above one or more othernucleation layers, such as a high temperature aluminum nitride layeroverlying a low temperature aluminum nitride layer. The silicon nitridelayer 402 can be formed by concurrently flowing TMA within the rangesfrom about 400 stand cubic centimeters (sccm) to about 750 sccm andammonia at about 1200 sccm to about 1700 sccm for about 25 minutes toabout 45 minutes at a temperature of about 850° C. to about 1300° C. ata pressure of about 35 mmbars to about 65 mm bars. The one or more baseAlGaN buffer layers 404 can be formed by concurrently flowing TMA withinthe ranges from about 550 sccm to about 850 sccm, TMG from about 50 sccmto about 75 sccm and ammonia at about 3500 sccm to about 6000 sccm forabout 20 minutes to about 30 minutes at a temperature of about 850° C.to about 1300° C. at a pressure of about 35 mmbars to about 65 mmbars.

FIG. 4 also illustrates the partially fabricated HEMT 410 undergoing adeposition process 420. The deposition process 420 includes flowing acombination of TMG, TMA, ammonia and an additional carbon source of, forexample, ethene (C₂H₄) gases to form a first AlGaN buffer layer 500 overthe one or more base AlGaN buffer layers 404, and provide the resultantstructure of FIG. 5 . The first AlGaN buffer layer 500 has a firstcarbon concentration higher than the baseline carbon concentration ofthe one or more base AlGaN buffer layers 404. The first AlGaN bufferlayer 500 can be formed by concurrently flowing TMA within the rangesfrom about 750 sccm to about 1200 sccm, TMG from about 100 sccm to about200 sccm, ethene from about 100 sccm to about 200 sccm, and ammoniaflowing at about 2000 sccm to about 3500 sccm for about 40 minutes toabout 65 minutes at a temperature of about 850° C. to about 1300° C. ata pressure of about 35 mm bars to about 65 mm bars.

FIG. 5 also illustrates the partially fabricated HEMT undergoing asubsequent deposition process 520. In the deposition process 520 shownin FIG. 5 , the additional carbon source is turned off. A second AlGaNbuffer layer 600 is formed over the first AlGaN buffer layer 500 byflowing a combination of TMG, TMA, and ammonia gases to form the secondAlGaN buffer layer 600 having a second carbon concentration lower thanthe first carbon concentration of the first AlGaN buffer layer 500 toprovide the resultant structure of FIG. 6 . The second AlGaN bufferlayer 600 can be formed by concurrently flowing TMA within the rangesfrom about 400 sccm to about 600 sccm, TMG from about 150 sccm to about275 sccm, and ammonia at about 2000 sccm to about 3500 sccm for about 45minutes to about 75 minutes at a temperature of about 850° C. to about1300° C. at a pressure of about 35 mmbars to about 65 mm bars.

Next, the partially fabricated HEMT of FIG. 6 undergoes yet anothersubsequent deposition process 620. In the deposition process 620 shownin FIG. 6 , the additional carbon source is turned on again. A GaN capbuffer layer 700 is formed overlying the second AlGaN buffer layer 600by flowing a combination of TMG, ammonia and the additional carbonsource to form the GaN cap buffer layer 700 having a third carbonconcentration higher than the second carbon concentration of the secondAlGaN buffer layer 600 to provide the resultant structure of FIG. 7 .The structure of FIG. 7 illustrates a completed buffer structure. TheGaN cap buffer layer 700 can be formed by concurrently flowing TMG fromabout 350 sccm to about 550 sccm, ethene from about 1300 sccm to about2000 sccm, and ammonia at about 15000 sccm to about 25000 sccm for about20 minutes to about 45 minutes at a temperature of about 800° C. toabout 1300° C. at a pressure of about 150 mmbars to about 250 mmbars.

FIG. 8 illustrates the partially fabricated HEMT after formation of anactive structure overlying the buffer structure. The active structureincludes a GaN channel layer 800 overlying the GaN cap buffer layer 700and an AlGaN channel layer 810 overlying the GaN channel layer 800. TheAlGaN channel layer 810 and the GaN channel layer 800 can be fabricatedwithout any carbon concentrations and in different deposition chambersthan the one used to form the modulated carbon buffer layers in thebuffer structure. An active channel is formed at the interface of theAlGaN channel layer 810 and the GaN channel layer 800 as previouslydiscussed. Any suitable technique for forming the AlGaN channel layer810 and the GaN channel layer 800 may be employed such as LPCVD, PECVD,HDPCVD, sputtering or spin-on techniques.

The GaN channel layer 800 can be formed by concurrently flowing TMG fromabout 150 sccm to about 250 sccm, and ammonia at about 25000 sccm toabout 40000 sccm for about 10 minutes to about 25 minutes at atemperature of about 800° C. to about 1300° C. at a pressure of about150 mmbars to about 250 mmbars. The AlGaN channel layer 810 can beformed by concurrently flowing TMA within the ranges from about 75 sccmto about 160 sccm, TMG from about 40 sccm to about 65 sccm and ammoniaat about 7000 sccm to about 11000 sccm for about 2 minutes to about 3minutes at a temperature of about 800° C. to about 1250° C. at apressure of about 50 mmbars to about 100 mmbars.

FIG. 9 illustrates a fabricated HEMT after formation of a drain contact900, a source contact 908 and a gate structure 902. The gate contactstructure 902 resides between the source contact 900 and the draincontact 908 with each overlying the AlGaN channel layer 810. The gatecontact structure 902 includes a gate barrier 906 (e.g., siliconnitride) disposed between a gate contact 904 and the AlGaN channel layer810. The gate barrier 906 can be formed by depositing a gate barriermaterial layer over the AlGaN channel layer 810, covering and patterninga photoresist material layer overlying the gate barrier material layerto protect the barrier material layer at the gate contact location, andperforming an etch of the gate barrier to remove the gate barriermaterial layer everywhere but the gate contact location. The photoresistmaterial layer can then be stripped to leave the gate barrier 906 at thegate contact location. The gate contact 904, the drain contact 900, andthe source contact 908 can be formed of gold, nickel or some othercontact material. A gate contact material layer can be formed bydepositing a gate contact material layer over the AlGaN channel layer810 and the gate barrier 906 and repeating the process of depositing aphotoresist material layer, patterning, etching and stripping theremaining photoresist material to leave the source contact 900, thedrain contact 908 and a gate contact 906 overlying the gate barrier 906.

For purposes of simplification of explanation the terms “overlay”,“overlaying”, “underlay” and “underlying” (and derivatives) are employedthroughout this disclosure to denote a relative position of two adjacentsurfaces in a selected orientation. Additionally, the terms “top” and“bottom” employed throughout this disclosure denote opposing surfaces inthe selected orientation. Similarly, the terms “upper” and “lower”denote relative positions in the selected orientation. In fact, theexamples used throughout this disclosure denote one selectedorientation. In the described examples, however, the selectedorientation is arbitrary and other orientations are possible (e.g.,upside down, rotated by 90 degrees, etc.) within the scope of thepresent disclosure.

What have been described above are examples of the invention. It is, ofcourse, not possible to describe every conceivable combination ofcomponents or methodologies for purposes of describing the invention,but one of ordinary skill in the art will recognize that many furthercombinations and permutations of the invention are possible.Accordingly, the invention is intended to embrace all such alterations,modifications, and variations that fall within the scope of thisapplication, including the appended claims.

What is claimed is:
 1. A method of forming an integrated circuit (IC)having a transistor, the method comprising: forming a first buffer layerhaving a first carbon concentration over a substrate; forming a secondbuffer layer having a second carbon concentration lower than the firstcarbon concentration over the first buffer layer; forming a third bufferlayer having a third carbon concentration higher than the second carbonconcentration over the second buffer layer; and forming an activestructure overlying the third buffer layer.
 2. The method of 1, whereinforming the first buffer layer comprises concurrently injecting gasesfrom an aluminum gas source, a gallium gas source and an ammonia gassource at respective flow rates to form a first aluminum gallium nitride(AlGaN) buffer layer having the first carbon concentration, wherein thecarbon is injected intrinsically from the aluminum gas source and/or thegallium gas source, and extrinsically from an additional carbon gassource.
 3. The method of 2, wherein forming the second buffer layercomprises concurrently injecting gases from the aluminum gas source, thegallium gas source and the ammonia gas source at respective flow ratesto form a second AlGaN buffer layer having the second carbonconcentration, wherein the carbon is injected intrinsically from thealuminum gas source and/or the gallium gas source.
 4. The method of 3,wherein forming the third buffer layer comprises concurrently injectinggases from the gallium gas source and the ammonia gas source atrespective flow rates to form a gallium nitride (GaN) buffer layerhaving the third carbon concentration, wherein the carbon is injectedintrinsically from the gallium gas source and extrinsically from theadditional carbon gas source.
 5. The method of 4, wherein the aluminumgas source is Trimethylamine Aluminum (TMA), the gallium gas source isTrimethylamine Gallium (TMG), and the additional carbon gas source isone of ethene (C2H4), methane (CH4), acetylene (C2H2), propane (C3H8),iso-butane (i-C4H10) and trimethylamine (N(CH3)3).
 6. The method ofclaim 5, further comprising forming one or more base AlGaN bufferlayers, over the substrate, having a baseline carbon concentration thatis lower than the first carbon concentration prior to forming of thefirst AlGaN buffer layer.
 7. The method of claim 1, wherein forming theactive structure comprises forming a first channel layer overlying thebuffer structure and a second channel layer overlying the first channellayer, the first channel layer and the second channel layer being formedfrom two different materials that induce a highly-mobile 2-dimensionalgas (2DEG) at their interface to form a transistor channel.
 8. Themethod of claim 7, wherein the first channel layer is a gallium nitride(GaN) channel layer and the second channel layer is an aluminum galliumnitride (AlGaN) channel layer.
 9. The method of claim 7, furthercomprising forming a gate contact structure, a source contact and adrain contact each overlying or in contact with the channel layer, thegate contact structure being disposed between the source contact and thedrain contact.
 10. A method of forming an integrated circuit (IC) havinga Gallium Nitride (GaN) transistor device on a substrate, comprising:forming a buffer structure overlying the substrate, the buffer structurecomprising a base aluminum gallium nitride (AlGaN) buffer layeroverlying the substrate, a first AlGaN buffer layer overlying the baseAlGaN buffer layer, and a second AlGaN buffer layer overlying the firstAlGaN buffer layer, a gallium nitride (GaN) buffer layer overlying thesecond AlGaN buffer layer, the first AlGaN buffer layer having a firstcarbon concentration, the second AlGaN buffer layer having a secondcarbon concentration lower than the first carbon concentration, and theGaN buffer layer having a third carbon concentration higher than thesecond carbon concentration; and forming an active structure overlyingthe buffer structure and comprising a first channel layer and a secondchannel layer overlying the first channel layer, the first channel layerand the second channel layer being formed from two different materialsthat induce a highly-mobile 2-dimensional gas (2DEG) at their interfaceto form a transistor channel, and a gate contact structure disposedbetween a source contact and a drain contact, the gate contactstructure, the source contact and the drain contact each beingrespectively disposed above or in contact with the transistor channel.11. The method of claim 10, wherein the first channel layer is a GaNchannel layer and the second channel layer is an AlGaN channel layer.12. The method of claim 10, wherein the substrate is a silicon substrateand further comprising an aluminum nitride layer disposed over thesilicon substrate.
 13. A method of forming an integrated circuit (IC)having a Gallium Nitride (GaN) transistor device on a substrate,comprising: forming a base aluminum gallium nitride (AlGaN) buffer layeroverlying the substrate; forming a first AlGaN buffer layer overlyingthe base AlGaN buffer layer, the first AlGaN buffer layer having a firstcarbon concentration; forming a second AlGaN buffer layer overlying thefirst AlGaN buffer layer, the second AlGaN buffer layer having a secondcarbon concentration lower than the first carbon concentration; forminga gallium nitride (GaN) buffer layer overlying the second AlGaN bufferlayer, the GaN buffer layer having a third carbon concentration higherthan the second carbon concentration; and forming an active structureoverlying the GaN buffer layer.
 14. The method of claim 13, whereinforming the active structure comprises: forming a first channel layer;forming a second channel layer overlying the first channel layer, thefirst channel layer and the second channel layer being formed from twodifferent materials that induce a highly-mobile 2-dimensional gas (2DEG)at their interface to form a transistor channel; and forming a gatecontact structure disposed between a source contact and a drain contact,the gate contact structure, the source contact and the drain contacteach being respectively disposed above or in contact with the secondchannel layer.
 15. The method of claim 14, wherein the first channellayer is a GaN channel layer and the second channel layer is an AlGaNchannel layer.
 16. The method of claim 13, wherein the substrate is asilicon substrate and further comprising an aluminum nitride layerdisposed over the silicon substrate.
 17. The method of 13, whereinforming the first AlGaN buffer layer comprises concurrently injectinggases from an aluminum gas source, a gallium gas source and an ammoniagas source, wherein the carbon is injected intrinsically from thealuminum gas source and/or the gallium gas source, and extrinsicallyfrom an additional carbon gas source.
 18. The method of 17, whereinforming the second AlGaN buffer layer comprises concurrently injectinggases from the aluminum gas source, the gallium gas source and theammonia gas source, wherein the carbon is injected intrinsically fromthe aluminum gas source and/or the gallium gas source.
 19. The method of18, wherein forming the GaN buffer layer comprises concurrentlyinjecting gases from the gallium gas source and the ammonia gas source,wherein the carbon is injected intrinsically from the gallium gas sourceand extrinsically from the additional carbon gas source.
 20. The methodof 19, wherein the aluminum gas source is Trimethylamine Aluminum (TMA),the gallium gas source is Trimethylamine Gallium (TMG), and theadditional carbon gas source is one of ethene (C2H4), methane (CH4),acetylene (C2H2), propane (C3H8), iso-butane (i-C4H10) andtrimethylamine (N(CH3)3).